KRISHNA C. SARASWAT

Corporate Board Profile

Tech Score: 100/100

Software Technology Evidence

2 mention(s) identify KRISHNA C. SARASWAT as having software/technology expertise.

Company	Filing Date	Evidence	Reason
LAM RESEARCH CORP	2014-09-23	Dr. Saraswat received a B.E. degree in electronics in 1968 from the Birla Institute of Technology and Science in Pilani, India, and M.S. and Ph.D. degrees in electrical engineering in 1969 and 1974, respectively, from Stanford University. At Stanford University, he has been engaged in research on new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI, nanoelectronics and solar cells.	Holds B.E., M.S., and Ph.D. degrees in electrical engineering; professor of electrical engineering and material science at Stanford University with extensive research in nanoelectronics and VLSI.
LAM RESEARCH CORP	2015-09-21	Dr. Saraswat received a B.E. degree in electronics from the Birla Institute of Technology and Science in Pilani, India, and M.S. and Ph.D. degrees in electrical engineering, respectively, from Stanford University. At Stanford University, he has been engaged in research on new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI, nanoelectronics and solar cells.	He has a B.E. degree in electronics and M.S. and Ph.D. degrees in electrical engineering, and is a professor engaged in research on materials and process technology related to VLSI and nanoelectronics, indicating strong technical and programming-related skills.

LAM RESEARCH CORP

Filing Date	Source Excerpt
2014-09-23	Dr. Saraswat received a B.E. degree in electronics in 1968 from the Birla Institute of Technology and Science in Pilani, India, and M.S. and Ph.D. degrees in electrical engineering in 1969 and 1974, respectively, from Stanford University. At Stanford University, he has been engaged in research on new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI, nanoelectronics and solar cells.
2015-09-21	Dr. Saraswat received a B.E. degree in electronics from the Birla Institute of Technology and Science in Pilani, India, and M.S. and Ph.D. degrees in electrical engineering, respectively, from Stanford University. At Stanford University, he has been engaged in research on new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI, nanoelectronics and solar cells.

Filing Date

Source Excerpt

2014-09-23

Dr. Saraswat received a B.E. degree in electronics in 1968 from the Birla Institute of Technology and Science in Pilani, India, and M.S. and Ph.D. degrees in electrical engineering in 1969 and 1974, respectively, from Stanford University. At Stanford University, he has been engaged in research on new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI, nanoelectronics and solar cells.

2015-09-21

Dr. Saraswat received a B.E. degree in electronics from the Birla Institute of Technology and Science in Pilani, India, and M.S. and Ph.D. degrees in electrical engineering, respectively, from Stanford University. At Stanford University, he has been engaged in research on new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI, nanoelectronics and solar cells.

Data sourced from SEC filings. Last updated: 2025-07-01